Walter
Lambrecht
Links to Recent Publications
Rare-earth nitrides
Calculated interband optical transition spectra of GdNChandrima Mitra and Walter R. L. Lambrecht,
Phys. Rev. B 78, 195203 (2008)
Magnetic exchange interactions in the gadolinium pnictides from first principles Chandrima Mitra and Walter R. L. Lambrecht,
Phys. Rev. B 78,134421 (2008)
Tetradymite magnetic semiconductors
Electronic structure and magnetism in Bi2Te3, Bi2Se3, and Sb2Te3 doped with transition metals (Ti-Zn), Paul Larson and Walter R. L. Lambrecht,
Phys. Rev. B 78, 195207 (2008)
Point defects in
chalcopyrites
First-principles study of native defects in CdGeAs2 Tula R. Paudel and Walter R. L. Lambrecht,
Phys. Rev. B 78, 085214 (2008)
Theoretical study of the phosphorus vacancy in ZnGeP2 , Xiaoshu Jiang, M. S. Miao, and Walter R. Lambrecht,
Phys. Rev. B 73, 193203 (2006)
Theoretical study of cation-related point defects in ZnGeP2 , Xiaoshu Jiang, M. S. Miao, and Walter R. Lambrecht,
Phys. Rev. B 71, 205212 (2005)
ZnO
First-principles calculation of the O vacancy in ZnO: A self-consistent gap-corrected approach Tula R. Paudel and Walter R. L. Lambrecht,
Phys. Rev. B 77, 205202 (2008)
Copper sulfide
Electronic and crystal structure of Cu2-xS: Full-potential electronic structure calculations Pavel Lukashev, Walter R. L. Lambrecht,
Takao Kotani and Mark van Schilfgaarde,
Phys. Rev. B 76,195202 (2007)
Zn-IV-N2 semiconductors
First-principles study of phonons and related ground-state properties and spectra in Zn-IV-N2 compoundsTula R. Paudel and Walter R. L. Lambrecht,
Phys. Rev. B 78,115204 (2008)
Vibrational modes in ZnGeN2: Raman study and theoryTimothy J. Peshek, Tula R. Paudel, Kathleen Kash, and Walter R. L. Lambrecht,
Phys. Rev. B 77, 235213 (2008)
First-principles calculation of the zone center phonons in ZnSiN2: Comparison with infrared dataTula R. Paudel and Walter R. L. Lambrecht
Phys. Rev. B 76, 115205 (2007)
Mn-doped ScN
Linear response theoretical study of the exchange interactions in Mn-doped ScN: Effects of disorder, band gap, and doping Aditi Herwadkar, Walter R. L. Lambrecht,
and Mark van Schilfgaarde
Phys. Rev. B 77, 134433 (2008)
Mn-doped ScN, a dilute ferromagnetic semiconductor with local exchange coupling Aditi Herwadkar and Walter R. L. Lambrecht,
Phys. Rev. B 72, 235207 (2005)
Transition metal
nitrides
Optical conductivity and X-ray absorption and emission study of the band structure of MnN films, S. Granville, B. J. Ruck, F. Budde, A. Koo, J. E. Downes, H. J. Trodahl, A. Bittar, N. Strickland, G. Williams, W. R. L. Lambrecht, Kevin E. Smith, Timothy Learmonth,J. Kennedy, A. Markwitz,
Phys. Rev. B 72, 205127 (2005)
Electronic structure and
magnetic interactions in MnN and Mn3N2, W. R. L. Lambrecht, Margarita
Prikhodko and M.S. Miao, Phys. Rev. B 68, 174411 (2003).
Transition
metal doping of SiC
Magnetic Properties of
Substitutional 3d Transition Metal Impurities in Silicon Carbide, M. S. Miao and W. R. L.
Lambrecht, Phys. Rev. B 68
, 125204 (2003)
High-pressure
phase transitions
Unified path for high-pressure
transitions of SiC poltypes to rocksalt, M. S. Miao and W. R. L.
Lambrecht, Phys. Rev. B 68, 092103 (2003)
Homogeneous strain deformation
path for the wurtzite to rocksalt high-pressure phase transition in GaN, Sukit Limpijumnong and Walter R.
L. Lambrecht, Phys. Rev. Lett. 86, 91-94 (2001)
Stacking faults
Electronic Structure of Thin
Heterocrystalline Superlattices in SiC and AlN, M. S. Miao and W. R. L.
Lambrecht, Phys. Rev. B 68, 155320 (2003)
Nonlinear optics
Noncritically phase-matched
second-harmonic-generation chalcopyrites based on CdSiAs2 and CdSiP2, Walter R. L. Lambrecht and
Xiaoshu Jiang , Phys. Rev. B 70, 045204 (2004)
Second Harmonic Generation of
I-III-VI2 Chalcopyrite Semiconductors: Effects
of Chemical Substitutions, S. N. Rashkeev and W. R. L.
Lambrecht, Phys. Rev. B 63, 165212-165224 (2001).
Spin-dependent resonant
tunneling through semimetallic ErAs quantum wells in a magnetic field, Andrey G. Petukhov, Walter
R. L. Lambrecht, and Benjamin Segall, Phys. Rev. B 53, 3646 (1996).
Theory of the optical
absorption bands in the 1--3 eV range in n-type Silicon Carbide polytypes, S. Limpijumnong, W. R. L.
Lambrecht, S. N. Rashkeev, and B. Segall, Phys. Rev. B 59, 12890-12899 (1999)
Please
send comments and suggestions to paul.larson@case.edu